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| SB706D-40 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low current rectification 3 Features * High reliability * Low reverse current 1 2 Marking Code: "ZE" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current ( t = 8.3 ms) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Tstg Value 45 40 30 200 125 - 55 to + 125 Unit V V mA mA O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 10 V Reverse Breakdown Voltage at IR = 10 A Capacitance between Terminals at VR = 1 V, f = 1 MHz Symbol VF IR V(BR)R CT Min. 45 Typ. 2 Max. 0.37 1 Unit V A V pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 04/12/2007 SB706D-40 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 04/12/2007 |
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